Cobalt silicide powder has the characteristics of low resistivity and good thermal stability, and is mainly used for large-scale integrated circuits. In addition, cobalt silicide has a crystal structure similar to silicon, which allows for the formation of epitaxial CoSi2/Si structures on silicon substrates
Cobalt silicide
Chemical formula: CoSi2
Molecular weight: 115.104
CAS number: 12017-12-8
EINECS number: 234-616-8
Density: 5.3g/cm3
Melting point: 1277 ℃
Lattice constant: a=0.535nm
Crystal system: Cubic crystal system
Appearance: Gray silicide ceramic powder
Solubility: insoluble in water
Nature and stability: If used and stored according to specifications, it will not decompose. CoSi2 can react with
hot hydrochloric acid, soluble in hydrochloric acid but insoluble in sulfuric acid. It can be corroded by aqua regia,
concentrated nitric acid, strong alkaline solutions, and molten hydroxide and carbonate bases. It can undergo
chemical reactions with hydrogen sulfide, hydrogen fluoride, hydrogen chloride, fluorine, chlorine, etc.
Synthesis method:
Mix cobalt powder and silicon powder evenly according to the chemical composition ratio of CoSi2, melt them
under air isolation conditions, and keep them at a temperature of 1150 ℃ for 100 hours to fully homogenize
them. The product is nearly a single phase of CoSi2.
Purpose: Cobalt silicide powder has the characteristics of low resistivity and good thermal stability, and is mainly
used for large-scale integrated circuits. In addition, cobalt silicide has a crystal structure similar to silicon, which
allows for the formation of epitaxial CoSi2/Si structures on silicon substrates,To study the interface characteristics
of epitaxial metal silicon. Cobalt silicide (Cosix) is a widely used material forthe connection between metals and
semiconductors. It works as an inter connect betweenthe base electrode of semiconductors and metal wires
in devices.Storage method: Store in a dry and cool environment, not exposed to air, to prevent oxidation and
aggregation caused by moisture, which may affect dispersion performance and usage effect.
