TiSi2 Titanium Disilicide
  • TiSi2 Titanium DisilicideTiSi2 Titanium Disilicide

TiSi2 Titanium Disilicide

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Product Description





Chinese Name: titanium disilicide

English Name: titanium disability


Molecular formula: si2ti

Molecular weight: 104.03800

Density: 4,39 g / cm3

Melting point: 1540 ° C

Boiling point: 1540 ° C

Molecular weight: 104.04

Stability: material oxide acid and alkali avoided under normal temperature and pressure

Production method: 1. Put metal titanium and metal silicon into an electric arc furnace and melt at 1100 ℃ under argon atmosphere to prepare titanium disilicide. 2. Synthesis method is adopted. Titanium and silicon are put into an electric arc furnace and melted at 1100 ℃ under argon atmosphere to prepare titanium disilicide.


Titanium silicide (TiSi2) has very ideal characteristics: high conductivity, high selectivity, good thermal stability, good adsorption to Si, good process adaptability and low interference to silicon connection parameters. Therefore, in integrated circuit devices, titanium silicide is widely used in the manufacture of gate, source / drain, interconnection and ohmic contact of metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistor (MOSFET) and dynamic random access memory (DRAM). Metal silicides can be prepared by physical vapor deposition (sputtering, thermal evaporation, etc.) and chemical vapor deposition (CVD). The purpose of preparing titanium silicide is to obtain TiSi2 with low resistance. TiSi2 has two kinds of polycrystalline phases: metastable C49 phase and thermodynamically stable C54 phase. C49 phase is orthorhombic bottom center crystal system; Each unit cell is composed of 12 atoms; The cell size is: a = 0.362nm, B = 1.376nm, C = 0.360nm; resistivity ρ= 60~100 μ Ω·cm。 The C54 phase is an orthorhombic face centered crystal system, and each unit cell is composed of 24 atoms; The cell size is: a = 0.826nm, B = 0.480nm, C = 0.853nm; resistivity ρ= 12~20 μ Ω·cm[24]。 Since TiSi2 of C54 phase has a resistivity equivalent to that of metal body, the purpose of preparing titanium silicide is to obtain TiSi2 of C54 phase.


Titanium silicide is widely used in the manufacture of gate, source / drain, interconnection and ohmic contact of metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistor (MOSFET) and dynamic random access memory (DRAM). Its application examples are as follows:

1) A titanium silicide barrier layer is prepared. The device adopting the method of manufacturing the titanium silicide barrier layer comprises a non silicide region and a silicide region separated by an isolation region. The upper surface of the device is covered with a sacrificial oxide layer. The present invention comprises: adopting a photolithography process to make the photoresist cover the non silicide region and expose the silicide region; The sacrificial oxide layer in silicide region is etched by wet etching process; The silicon exposed in the silicide region is amorphized and as implanted; Removing the photoresist remaining in the non silicide region; Sputtering metal titanium and performing a first alloying treatment; The metal titanium that is not alloyed is removed by wet etching, and the second alloying treatment is performed. The invention removes the silicideblock oxide layer in the prior art and reduces the process cost; At the same time, the loss of isolation oxide film caused by etching is reduced and the process stability is improved.

2) A kind of in-situ synthesized titanium silicide (Ti5Si3) particle reinforced titanium carbide (Ti3AlC2) matrix composite was prepared. Ti3AlC2 / Ti5Si3 composites with different volume ratios were prepared by adding a certain amount of silicon. The volume percentage of titanium silicide particle reinforced phase was 10 ~ 40%. The specific preparation method is as follows: firstly, using titanium powder, aluminum powder, silicon powder and graphite powder as raw materials, the molar ratio of Ti ∶ al ∶ Si ∶ C is 3 ∶ 1.1-x ∶ x ∶ 1.8-2.0, where x is 0.1-0.5. The raw material powder is mixed by physical and mechanical methods for 8-24 hours, loaded into the graphite mold, the applied pressure is 10-20Mpa, and sintered in the hot pressing furnace with protective atmosphere. The heating rate is 10-50 ℃ / min, the sintering temperature is 1400-1600 ℃, the sintering time is 0.5-2 hours, and the sintering pressure is 20-40mpa. The present invention can prepare titanium aluminum carbide / titanium silicide composite material with high purity and high strength at a lower temperature and in a shorter time.

3) The composite functional titanium silicide coated glass was prepared. A thin film is deposited on a common float glass substrate or a silicon thin film is deposited between them. The mechanical strength and chemical corrosion resistance of the coated glass can be improved by preparing a composite film of titanium silicide and silicon or mixing a small amount of active carbon or nitrogen into the film to obtain a composite film of titanium silicide composite silicon carbide or titanium carbide or titanium silicide composite silicon nitride or titanium nitride. The invention is a new type of coated glass which combines the functions of light adjustment, heat insulation and low radiation glass.

4) A semiconductor element is prepared, comprising a silicon substrate on which a gate, a source and a drain are formed, an insulating layer is formed between the gate and the silicon substrate, the gate is composed of a polysilicon layer on the insulating layer and a titanium silicide layer on the polysilicon layer, a protective layer is formed on the titanium silicide layer, and three structural layers are surrounded around the protective layer, the titanium silicide layer, the polysilicon layer and the insulating layer, From the inside to the outside, the silicon nitride spacer layer, the parent layer and the silicon oxide spacer layer are sequentially formed. The titanium silicide layer is formed on the source and drain electrodes, the inner dielectric layer is formed on the silicon substrate, and the contact window opening is formed in the inner dielectric layer. By adopting the above technical scheme, the utility model can make the grid electrode and the wires in the contact window completely insulated, and no short circuit phenomenon will occur.

Storage method:

This product should be sealed and stored in a dry and cool environment. It should not be exposed to the air for a long time to prevent agglomeration due to moisture, which will affect the dispersion performance and use effect. In addition, it should avoid heavy pressure and contact with oxidant. It should be transported as ordinary goods.







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